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IVPS
Line with vertical, parallel sidewalls
Specifications:
Material:
Width of line:
Depth of line:
Surface/sidewall angle:
Sidewall parallelity:
Top corner radius:
Edge roughness:
Silicon
0.8 µm ± 15 %
1 µm ± 15 %
< 90° ± 0,5°
< 0.4°
< 10 nm
< 5 nm
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